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| PartNumber | DMN3016LFDE-7 | DMN3016LFDE-13 | DMN3016LFDF-13 |
| Description | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | MOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | U-DFN2020-E-6 | U-DFN2020-E-6 | U-DFN2020-F-6 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 10 A | 10 A | - |
| Rds On Drain Source Resistance | 16 mOhms | 16 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.4 V | 1.4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 25.1 nC | 25.1 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.02 W | 2.02 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.6 mm | 0.6 mm | - |
| Length | 2 mm | 2 mm | - |
| Product | Enhancement Mode MOSFET | Enhancement Mode MOSFET | - |
| Series | DMN3016 | DMN3016 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Enhancement Mode MOSFET | Enhancement Mode MOSFET | - |
| Width | 2 mm | 2 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | - | - | - |
| Fall Time | 5.6 ns | 5.6 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16.5 ns | 16.5 ns | - |
| Factory Pack Quantity | 3000 | 10000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26.1 ns | 26.1 ns | - |
| Typical Turn On Delay Time | 4.8 ns | 4.8 ns | - |
| Unit Weight | - | - | 0.000238 oz |