DMN32D2LFB4-7 vs DMN32D2LFB4-7-01 vs DMN32D2LFB4-7B

 
PartNumberDMN32D2LFB4-7DMN32D2LFB4-7-01DMN32D2LFB4-7B
DescriptionMOSFET 350mW 30Vdss
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseX1-DFN1006-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current300 mA--
Rds On Drain Source Resistance1.2 Ohms--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation350 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.35 mm--
Length1 mm--
ProductMOSFET Small Signal--
SeriesDMN32--
Transistor Type1 N-Channel--
Width0.6 mm--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
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