DMN5L06VA-7 vs DMN5L06V-7 vs DMN5L06VAK

 
PartNumberDMN5L06VA-7DMN5L06V-7DMN5L06VAK
DescriptionMOSFET Dual N-ChannelMOSFET Dual N-Channel
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-563-6SOT-563-6-
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage50 V50 V-
Id Continuous Drain Current280 mA280 mA-
Rds On Drain Source Resistance3 Ohms3 Ohms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation150 mW150 mW-
ConfigurationDualDualDual
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelDigi-ReelR
Height0.6 mm0.6 mm-
Length1.6 mm1.6 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesDMN5L06DMN5L06DMN5L06
Transistor Type2 N-Channel2 N-Channel2 N-Channel
Width1.2 mm1.2 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.000106 oz0.000106 oz0.000106 oz
Package Case--SOT-563, SOT-666
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-563
FET Type--2 N-Channel (Dual)
Power Max--250mW
Drain to Source Voltage Vdss--50V
Input Capacitance Ciss Vds--50pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--280mA
Rds On Max Id Vgs--2 Ohm @ 50mA @ 5V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs---
Pd Power Dissipation--250 mW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--280 mA
Vds Drain Source Breakdown Voltage--50 V
Rds On Drain Source Resistance--2 Ohms
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