 |  | | |
| PartNumber | DMP21D0UFB-7 | DMP21D0UFB-7B | DMP21D0UFB-7B , WSL2010R |
| Description | MOSFET MOSFET P-CH | Trans MOSFET P-CH 20V 1.17A 3-Pin DFN T/R (Alt: DMP21D0UFB-7B) | |
| Manufacturer | Diodes Incorporated | DIODES | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | X1-DFN1006-3 | - | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.17 A | - | - |
| Rds On Drain Source Resistance | 960 mOhms | - | - |
| Packaging | Reel | Reel | - |
| Series | DMP21 | DMP21D0UFB | - |
| Brand | Diodes Incorporated | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Package Case | - | X1-DFN1006-3 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | 1 P-Channel ESD | - |
| Transistor Type | - | 1 P-Channel ESD | - |
| Pd Power Dissipation | - | 430 mW | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 18.5 ns | - |
| Rise Time | - | 8 ns | - |
| Vgs Gate Source Voltage | - | +/- 8 V | - |
| Id Continuous Drain Current | - | - 770 mA | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 700 mV | - |
| Rds On Drain Source Resistance | - | 960 mOhms | - |
| Typical Turn Off Delay Time | - | 31.7 ns | - |
| Typical Turn On Delay Time | - | 7.1 ns | - |
| Qg Gate Charge | - | 1.5 nC | - |
| Forward Transconductance Min | - | 50 mS | - |
| Channel Mode | - | Enhancement | - |