DMP4025SFG-13 vs DMP4025SFG-7 vs DMP4025SFG

 
PartNumberDMP4025SFG-13DMP4025SFG-7DMP4025SFG
DescriptionMOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2AMOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A
ManufacturerDiodes IncorporatedDiodes IncorporatedDIODES
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8-
Number of Channels1 Channel--
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current7.2 A7.2 A-
Rds On Drain Source Resistance18 mOhms25 mOhms-
Vgs th Gate Source Threshold Voltage1.8 V1.8 V-
Vgs Gate Source Voltage20 V--
Qg Gate Charge33.7 nC14 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation810 mW810 mW-
ConfigurationSingle--
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMP40DMP40DMP40
Transistor Type1 P-Channel--
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min16.6 S16.6 S-
Fall Time30.9 ns30.9 ns30.9 ns
Product TypeMOSFETMOSFET-
Rise Time14.7 ns14.7 ns14.7 ns
Factory Pack Quantity30002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time53.7 ns53.7 ns53.7 ns
Typical Turn On Delay Time6.9 ns6.9 ns6.9 ns
Unit Weight0.002540 oz0.002540 oz0.002540 oz
Package Case--PowerDI-3333
Pd Power Dissipation--810 mW
Id Continuous Drain Current--- 7.2 A
Vds Drain Source Breakdown Voltage--- 40 V
Vgs th Gate Source Threshold Voltage--- 1.8 V
Rds On Drain Source Resistance--25 mOhms
Qg Gate Charge--14 nC
Forward Transconductance Min--16.6 S
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