DMP6023LE-13 vs DMP6023LE vs DMP6023LE-13-CUT TAPE

 
PartNumberDMP6023LE-13DMP6023LEDMP6023LE-13-CUT TAPE
DescriptionMOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF
ManufacturerDiodes IncorporatedDIODES-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current18.2 A--
Rds On Drain Source Resistance28 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge53.1 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation17.3 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.6 mm--
Length6.5 mm--
SeriesDMP60DMP60-
Transistor Type1 P-Channel--
Width3.5 mm--
BrandDiodes Incorporated--
Fall Time62 ns62 ns-
Product TypeMOSFET--
Rise Time7.1 ns7.1 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time110 ns110 ns-
Typical Turn On Delay Time6 ns6 ns-
Unit Weight0.003951 oz0.006632 oz-
Package Case-SOT-223-4-
Pd Power Dissipation-2 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-- 7 A-
Vds Drain Source Breakdown Voltage-- 60 V-
Vgs th Gate Source Threshold Voltage-- 3 V-
Rds On Drain Source Resistance-28 mOhms-
Qg Gate Charge-53.1 nC-
Forward Transconductance Min---
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