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| PartNumber | DMT6004LPS-13 | DMT6004SCT | DMT6004LPS |
| Description | MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W | MOSFET MOSFET BVDSS: 41V-60V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | PowerDI5060-8 | TO-220-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 2.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 96.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | PowerDI | - | - |
| Packaging | Reel | Tube | - |
| Height | 1 mm | - | - |
| Length | 5.8 mm | - | - |
| Series | DMT6004 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.9 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 32.9 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 17.7 ns | - | - |
| Factory Pack Quantity | 2500 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 53.5 ns | - | - |
| Typical Turn On Delay Time | 9.9 ns | - | - |
| Unit Weight | 0.003386 oz | 0.063493 oz | - |