PartNumber | DMTH6016LPS-13 | DMTH6016LPD-13 | DMTH6016LPDQ-13 |
Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V~60V PowerDI5060-8 T&R 2.5K | MOSFET MOSFET BVDSS: 41V-60V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerDI5060-8 | PowerDI5060-8 | PowerDI5060-8 |
Packaging | Reel | Reel | Reel |
Series | DMTH6016 | DMTH6016 | DMTH6016 |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.003386 oz | - | 0.003422 oz |
Number of Channels | - | - | 2 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Id Continuous Drain Current | - | - | 33.2 A |
Rds On Drain Source Resistance | - | - | 19 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 1 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 17 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 175 C |
Pd Power Dissipation | - | - | 37.5 W |
Configuration | - | - | Dual |
Channel Mode | - | - | Enhancement |
Qualification | - | - | AEC-Q101 |
Fall Time | - | - | 7 ns |
Rise Time | - | - | 5.2 ns |
Typical Turn Off Delay Time | - | - | 13 ns |
Typical Turn On Delay Time | - | - | 3.4 ns |