DMTH8012LK3-13 vs DMTH8012LPS-13 vs DMTH8012LK3Q-13

 
PartNumberDMTH8012LK3-13DMTH8012LPS-13DMTH8012LK3Q-13
DescriptionMOSFET N-Ch Enh Mode FET 80V 20Vgss 80AMOSFET N-Ch Enh Mode FET 80V 20Vgss 80AMOSFET 80V 175c N-Ch FET 16mOhm 10Vgs 50A
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3PowerDI5060-8TO-252-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance12.1 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge34 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2.6 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReelReel
SeriesDMTH8012DMTH8012DMTH8012
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min---
Fall Time3.5 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time3.8 ns--
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time16.5 ns--
Typical Turn On Delay Time4.9 ns--
Unit Weight0.011993 oz0.003386 oz0.011993 oz
Qualification--AEC-Q101
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