DVR5V0W-7 vs DVR5V0W vs DVR5V0W-7-F

 
PartNumberDVR5V0W-7DVR5V0WDVR5V0W-7-F
DescriptionBipolar Transistors - BJT Complex Array
ManufacturerDiodes IncorporatedDIODES-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max18 V--
Collector Base Voltage VCBO45 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage500 mV500 mV-
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDVR5VDVR5V-
Height1 mm--
Length2.2 mm--
PackagingReelReel-
Width1.35 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min150 at 100 mA, 1 V--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz0.000212 oz-
Package Case-SOT-363-
Pd Power Dissipation-200 mW-
Collector Emitter Voltage VCEO Max-18 V-
Collector Base Voltage VCBO-45 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-150 at 100 mA 1 V-
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