EMG11T2R vs EMG11 vs EMG11 / G11

 
PartNumberEMG11T2REMG11EMG11 / G11
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
ManufacturerROHM SemiconductorROHM-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual Common Emitter--
Transistor PolarityNPN--
Typical Input Resistor2.2 kOhms--
Typical Resistor Ratio21--
Mounting StyleSMD/SMT--
Package / CaseEMT-5--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation150 mW--
Maximum Operating Temperature+ 150 C--
SeriesEMG11--
PackagingReel--
DC Current Gain hFE Max80--
Height0.5 mm--
Length1.6 mm--
Width1.2 mm--
BrandROHM Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity8000--
SubcategoryTransistors--
Part # AliasesEMG11--
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