FCPF16N60 vs FCPF165N65S3R0L vs FCPF165N65S3L1

 
PartNumberFCPF16N60FCPF165N65S3R0LFCPF165N65S3L1
DescriptionMOSFET 600V N-CH SuperFETMOSFET SUPERFET3 650V TO220F PKGMOSFET N-CH 650V 19A TO220F-3
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220F-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V650 V-
Id Continuous Drain Current16 A19 A-
Rds On Drain Source Resistance260 mOhms165 mOhms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation37.9 W35 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height16.3 mm--
Length10.67 mm--
SeriesFCPF16N60SuperFET3-
Transistor Type1 N-Channel1 N-Channel SuperFET III MOSFET-
Width4.7 mm--
BrandON Semiconductor / FairchildON Semiconductor-
Forward Transconductance Min11.5 S--
Fall Time90 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time130 ns16 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time165 ns43 ns-
Typical Turn On Delay Time42 ns17 ns-
Unit Weight0.080072 oz--
Vgs th Gate Source Threshold Voltage-2.5 V-
Qg Gate Charge-35 nC-
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