FDB3652-F085 vs FDB3652 vs FDB3652-CUT TAPE

 
PartNumberFDB3652-F085FDB3652FDB3652-CUT TAPE
DescriptionMOSFET N-Ch PowerTrench Trench Mos.MOSFET N-Channel PowerTrench
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current61 A61 A-
Rds On Drain Source Resistance16 mOhms14 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation150 W150 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
TradenamePowerTrench--
PackagingReelReel-
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesFDB3652_F085FDB3652-
Transistor Type1 N-Channel1 N-Channel-
TypePower Trench MOSFETMOSFET-
Width9.65 mm9.65 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time45 ns45 ns-
Product TypeMOSFETMOSFET-
Rise Time85 ns85 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesFDB3652_F085FDB3652_NL-
Unit Weight0.046296 oz0.046296 oz-
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