FDB8441 vs FDB8441_F085 vs FDB8441S

 
PartNumberFDB8441FDB8441_F085FDB8441S
DescriptionMOSFET 40V N-Channel PowerTrench MOSFETIGBT Transistors MOSFET 40V N-Ch PowerTrench
ManufacturerON SemiconductorFSC-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance1.9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePowerTrench--
PackagingReelReel-
Height4.83 mm--
Length10.67 mm--
SeriesFDB8441--
Transistor Type1 N-Channel1 N-Channel-
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time17.9 ns17.9 ns-
Product TypeMOSFET--
Rise Time24 ns24 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns75 ns-
Typical Turn On Delay Time23 ns23 ns-
Unit Weight0.046296 oz0.046296 oz-
Package Case-TO-252-3-
Pd Power Dissipation-300 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-80 A-
Vds Drain Source Breakdown Voltage-40 V-
Rds On Drain Source Resistance-1.9 mOhms-
Top