FDC6000NZ vs FDC6000NZ-NL vs FDC6000NZ_F077

 
PartNumberFDC6000NZFDC6000NZ-NLFDC6000NZ_F077
DescriptionMOSFET Dual N-Channel 2.5V Spec PowerTrenchMOSFET 2N-CH 20V 7.3A 6-SSOP
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryMOSFET-FETs - Arrays
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current7.3 A--
Rds On Drain Source Resistance20 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Tape & Reel (TR)
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
Transistor Type2 N-Channel--
TypeMOSFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min30 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesFDC6000NZ_NL--
Unit Weight0.000557 oz--
Series--PowerTrenchR
Package Case--6-SSOT Flat-lead, SuperSOT-6 FLMP
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SuperSOT-6 FLMP
FET Type--2 N-Channel (Dual)
Power Max--1.2W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--840pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--7.3A
Rds On Max Id Vgs--20 mOhm @ 6.5A, 4.5V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--11nC @ 4.5V
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