FDD10AN06A0 vs FDD10AN06A0-F085 vs FDD10AN06A0-NL

 
PartNumberFDD10AN06A0FDD10AN06A0-F085FDD10AN06A0-NL
DescriptionMOSFET 60V 50a .15 Ohms/VGS=1VMOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance9.4 mOhms9.4 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation135 W135 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFDD10AN06A0FDD10AN06_F085-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time32 ns32 ns-
Product TypeMOSFETMOSFET-
Rise Time79 ns79 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns32 ns-
Typical Turn On Delay Time8 ns8 ns-
Part # AliasesFDD10AN06A0_NLFDD10AN06A0_F085-
Unit Weight0.009184 oz0.009184 oz-
Vgs th Gate Source Threshold Voltage-4 V-
Qg Gate Charge-28 nC-
Qualification-AEC-Q101-
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