FDG6301N vs FDG6301N SOT363-01 PB- vs FDG6301N(PB-FREE)

 
PartNumberFDG6301NFDG6301N SOT363-01 PB-FDG6301N(PB-FREE)
DescriptionMOSFET SC70-6 N-CH 25V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current220 mA--
Rds On Drain Source Resistance4 Ohms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesFDG6301N--
Transistor Type2 N-Channel--
TypeFET--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min0.2 S--
Fall Time4.5 ns--
Product TypeMOSFET--
Rise Time4.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time4 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesFDG6301N_NL--
Unit Weight0.000988 oz--
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