FDPF33N25T vs FDPF33N25T,33N25T, vs FDPF33N25T,FDPF33N25TRDT

 
PartNumberFDPF33N25TFDPF33N25T,33N25T,FDPF33N25T,FDPF33N25TRDT
DescriptionMOSFET TBD
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance77 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation37 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.07 mm--
Length10.36 mm--
SeriesFDPF33N25T--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min26.6 S--
Fall Time120 ns--
Product TypeMOSFET--
Rise Time230 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.080072 oz--
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