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| PartNumber | FDS6912 | FDS6912A | FDS6912-NL |
| Description | MOSFET SO-8 DUAL N-CH 30V | MOSFET 2N-CH 30V 6A 8SOIC | |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | F |
| Product Category | MOSFET | IC Chips | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | Dual Dual Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | FDS6912 | PowerTrenchR | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 3.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 8 ns | 5 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | 5 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | 23 ns | - |
| Typical Turn On Delay Time | 8 ns | 8 ns | - |
| Unit Weight | 0.006596 oz | 0.006596 oz | - |
| Part Aliases | - | FDS6912A_NL | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 900mW | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 575pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 6A | - |
| Rds On Max Id Vgs | - | 28 mOhm @ 6A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 8.1nC @ 5V | - |
| Pd Power Dissipation | - | 1.6 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 6 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 28 mOhms | - |
| Forward Transconductance Min | - | 25 S | - |