FDS86106 vs FDS86106-NL vs FDS86140

 
PartNumberFDS86106FDS86106-NLFDS86140
DescriptionMOSFET 100V N-Channel PowerTrench MOSFETMOSFET N-CH 100V 11.2A 8SOIC
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current3.4 A--
Rds On Drain Source Resistance83 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation5 W--
ConfigurationSingle--
TradenamePowerTrench--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesFDS86106--
Transistor Type1 N-Channel--
TypeN-Channel Power Trench MOSFET--
Width3.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.004586 oz--
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