FDS8960C vs FDS8960C-NL vs FDS8962

 
PartNumberFDS8960CFDS8960C-NLFDS8962
DescriptionMOSFET 35V Dual N & P-Chl PwrTrnch #174 MOSFET
ManufacturerON Semiconductor30000FAIRCHILDFairchild Semiconductor
Product CategoryMOSFETIC ChipsIC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage35 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance24 mOhms, 53 mOhms--
Vgs Gate Source Voltage20 V, 25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel-Digi-ReelR
Height1.75 mm--
Length4.9 mm--
SeriesFDS8960C-PowerTrenchR
Transistor Type1 N-Channel, 1 P-Channel--
TypeMOSFET--
Width3.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min23 S, 9 S--
Fall Time3 ns, 5 ns--
Product TypeMOSFET--
Rise Time5 ns, 16 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns, 20 ns--
Typical Turn On Delay Time8 ns, 12 ns--
Unit Weight0.008127 oz--
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--N and P-Channel
Power Max--900mW
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--575pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--7A, 5A
Rds On Max Id Vgs--30 mOhm @ 7A, 10V
Vgs th Max Id--3V @ 250μA
Gate Charge Qg Vgs--26nC @ 10V
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