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| PartNumber | FF200R12KS4 | FF200R12KS4 , 1N5363B | FF200R12KS4-B2 |
| Description | IGBT Modules 1200V 200A DUAL | ||
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 3.2 V | - | - |
| Continuous Collector Current at 25 C | 275 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 1.4 kW | - | - |
| Package / Case | 62 mm | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 30.5 mm | - | - |
| Length | 106.4 mm | - | - |
| Width | 61.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF200R12KS4HOSA1 SP000100707 | - | - |