PartNumber | FGA15N120ANTDTU-F109 | FGA15N120ANTDTU | FGA15N120ANTDTU,FGA15N12 |
Description | IGBT Transistors 1200V NPT Trench | IGBT Transistors 1200V NPT Trench IGBT | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-3PN-3 | TO-3P-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | FGA15N120ANTDTU | - | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 24 A | 30 A | - |
Height | 18.9 mm | 19.9 mm | - |
Length | 15.8 mm | 15.6 mm | - |
Width | 5 mm | 4.8 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 450 | 450 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | FGA15N120ANTDTU_F109 | - | - |
Unit Weight | 0.225789 oz | 0.245577 oz | - |
Pd Power Dissipation | - | 186 W | - |