FJAF4310OTU vs FJAF4310 vs FJAF43100TU

 
PartNumberFJAF4310OTUFJAF4310FJAF43100TU
DescriptionBipolar Transistors - BJT NPN Si Transistor Epitaxial
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3PF-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max140 V--
Collector Base Voltage VCBO200 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current10 A10 A-
Gain Bandwidth Product fT30 MHz30 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFJAF4310--
DC Current Gain hFE Max180180-
Height16.7 mm--
Length15.7 mm--
PackagingTubeTube-
Width5.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current10 A10 A-
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation80 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity360--
SubcategoryTransistors--
Part # AliasesFJAF4310OTU_NL--
Unit Weight0.245577 oz0.245577 oz-
Part Aliases-FJAF4310OTU_NL-
Package Case-TO-3PF-
Pd Power Dissipation-80 W-
Collector Emitter Voltage VCEO Max-140 V-
Collector Base Voltage VCBO-200 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-50-
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