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| PartNumber | FJN4305RBU | FJN4305RTA | FJN4305R |
| Description | Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 10K | TRANS PREBIAS PNP 300MW TO92-3 | |
| Manufacturer | ON Semiconductor | FAICHILD | FAICHILD |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | - | - |
| Configuration | Single | Single | Single |
| Transistor Polarity | PNP | PNP | PNP |
| Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | 4.7 kOhms |
| Typical Resistor Ratio | 0.47 | 0.47 | 0.47 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | - 0.1 A | - 0.1 A | - 0.1 A |
| Peak DC Collector Current | 100 mA | 100 mA | 100 mA |
| Pd Power Dissipation | 300 mW | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Bulk | Ammo Pack | Ammo Pack |
| DC Current Gain hFE Max | 30 | - | - |
| Emitter Base Voltage VEBO | - 10 V | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Type | PNP Epitaxial Silicon Transistor | - | - |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.006286 oz | 0.008466 oz | 0.008466 oz |
| Package Case | - | TO-92-3 Kinked Lead | TO-92-3 Kinked Lead |
| Pd Power Dissipation | - | 0.3 W | 0.3 W |
| Collector Emitter Voltage VCEO Max | - | 50 V | 50 V |
| Emitter Base Voltage VEBO | - | - 10 V | - 10 V |
| DC Collector Base Gain hfe Min | - | 30 | 30 |