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| PartNumber | FJN4312RBU | FJN4312RTA | FJN4312R |
| Description | Bipolar Transistors - Pre-Biased PNP/40V/100mA/47K | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Configuration | Single | Single | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 47 kOhms | 47 kOhms | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 | TO-92-3 Kinked Lead | - |
| DC Collector/Base Gain hfe Min | 100 | 100 | - |
| Collector Emitter Voltage VCEO Max | 40 V | 40 V | - |
| Continuous Collector Current | - 0.1 A | - 0.1 A | - |
| Peak DC Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 300 mW | 300 mW | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Bulk | Ammo Pack | - |
| DC Current Gain hFE Max | 600 | 600 | - |
| Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
| Height | 5.33 mm | 5.33 mm | - |
| Length | 5.2 mm | 5.2 mm | - |
| Type | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor | - |
| Width | 4.19 mm | 4.19 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 1000 | 2000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.006286 oz | 0.010088 oz | - |