FJNS4202RTA vs FJNS4202RBU vs FJNS4202R

 
PartNumberFJNS4202RTAFJNS4202RBUFJNS4202R
DescriptionBipolar Transistors - Pre-Biased PNP Si Transistor EpitaxialTRANS PREBIAS PNP 300MW TO92S
ManufacturerON Semiconductor-FAILCHILD
Product CategoryBipolar Transistors - Pre-Biased-Transistors (BJT) - Single, Pre-Biased
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio1--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
DC Collector/Base Gain hfe Min30--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current- 0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingAmmo Pack--
DC Current Gain hFE Max30--
Emitter Base Voltage VEBO- 10 V--
Height3.7 mm--
Length4 mm--
TypePNP Epitaxial Silicon Transistor--
Width2.31 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.006286 oz--
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