 |  | | |
| PartNumber | FP25R12KT4_B11 | FP25R12KT4_B15 | FP25R12KT4-B16 |
| Description | IGBT Modules | IGBT Modules IGBT Module 25A 1200V | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Packaging | Tray | Tray | - |
| Series | IGBT4 | IGBT4 | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | TRENCHSTOP | TRENCHSTOP | - |
| Part # Aliases | FP25R12KT4B11BOSA1 SP001000972 | FP25R12KT4B15BOSA1 SP000808002 | - |
| RoHS | - | Y | - |
| Product | - | IGBT Silicon Modules | - |
| Configuration | - | Dual Modules | - |
| Collector Emitter Voltage VCEO Max | - | 1200 V | - |
| Collector Emitter Saturation Voltage | - | 1.85 V | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Pd Power Dissipation | - | 160 W | - |
| Package / Case | - | Module | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Mounting Style | - | SMD/SMT | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |