FQA9N90C vs FQA9N90C FQA11N90C vs FQA9N90C FQA9N90 9N90

 
PartNumberFQA9N90CFQA9N90C FQA11N90CFQA9N90C FQA9N90 9N90
DescriptionMOSFET 900V N-Channel Q-FET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance1.4 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation280 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min9.2 S--
Fall Time75 ns--
Product TypeMOSFET--
Rise Time120 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time100 ns--
Typical Turn On Delay Time50 ns--
Part # AliasesFQA9N90C_NL--
Unit Weight0.000198 oz--
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