FQPF4N90C vs FQPF4N90 vs FQPF4N90C,4N90C

 
PartNumberFQPF4N90CFQPF4N90FQPF4N90C,4N90C
DescriptionMOSFET 900V N-Ch Q-FET advance C-SeriesMOSFET 900V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage900 V900 V-
Id Continuous Drain Current4 A2.5 A-
Rds On Drain Source Resistance4.2 Ohms3.1 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation47 W47 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height16.07 mm16.3 mm-
Length10.36 mm10.67 mm-
SeriesFQPF4N90C--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width4.9 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min5 S2.6 S-
Fall Time35 ns40 ns-
Product TypeMOSFETMOSFET-
Rise Time50 ns70 ns-
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns45 ns-
Typical Turn On Delay Time25 ns25 ns-
Part # AliasesFQPF4N90C_NL--
Unit Weight0.080072 oz0.074950 oz-
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