FQU10N20CTU vs FQU10N20 vs FQU10N20C

 
PartNumberFQU10N20CTUFQU10N20FQU10N20C
DescriptionMOSFET N-CH/200V/10A/QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current7.8 A--
Rds On Drain Source Resistance360 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height6.3 mm--
Length6.8 mm--
SeriesFQU10N20C--
Transistor Type1 N-Channel--
Width2.5 mm--
BrandON Semiconductor / Fairchild--
Fall Time72 ns--
Product TypeMOSFET--
Rise Time92 ns--
Factory Pack Quantity5040--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesFQU10N20CTU_NL--
Unit Weight0.012102 oz--
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