FQU8P10TU vs FQU8P10TU,FQU8P10 vs FQU8P10TU_NL

 
PartNumberFQU8P10TUFQU8P10TU,FQU8P10FQU8P10TU_NL
DescriptionMOSFET -100V Single
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current6.6 A--
Rds On Drain Source Resistance410 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height6.3 mm--
Length6.8 mm--
SeriesFQU8P10--
Transistor Type1 P-Channel--
TypeMOSFET--
Width2.5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.1 S--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time110 ns--
Factory Pack Quantity5040--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesFQU8P10TU_NL--
Unit Weight0.011993 oz--
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