FS150R12KE3 vs FS150R12KE3BOSA1 vs FS150R12KE3ENG

 
PartNumberFS150R12KE3FS150R12KE3BOSA1FS150R12KE3ENG
DescriptionIGBT Modules 1200V 150A FL BRIDGEIGBT MODULE 1200V 150A
ManufacturerInfineon-EUPEC
Product CategoryIGBT Modules-Module
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C205 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation700 W--
Package / CaseEconoPACK--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height12 mm--
Length35.6 mm--
Width25.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFS150R12KE3BOSA1 SP000100417--
Unit Weight10.582189 oz--
Top