FS75R12KE3_B9 vs FS75R12KE3GBOSA1 vs FS75R12KE3-B3

 
PartNumberFS75R12KE3_B9FS75R12KE3GBOSA1FS75R12KE3-B3
DescriptionIGBT Modules IGBT Module 75A 1200VMOD IGBT LOW PWR ECONO3-4
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationIGBT-Inverter--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C105 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation355 W--
Package / CaseModule--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleSMD/SMT--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFS75R12KE3B9BOSA1 SP000721046--
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