FZ600R12KS4 vs FZ600R12KS4 , 1SS358 vs FZ600R12KS4 ENG

 
PartNumberFZ600R12KS4FZ600R12KS4 , 1SS358FZ600R12KS4 ENG
DescriptionIGBT Modules N-CH 1.2KV 700A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage3.2 V--
Continuous Collector Current at 25 C700 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation3900 W--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height36.5 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFZ600R12KS4HOSA1 SP000100773--
Unit Weight12 oz--
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