FZT489TA vs FZT489QTA vs FZT489

 
PartNumberFZT489TAFZT489QTAFZT489
DescriptionBipolar Transistors - BJT NPN Medium PowerBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max30 V30 V-
Collector Base Voltage VCBO50 V50 V-
Emitter Base Voltage VEBO5 V7 V-
Collector Emitter Saturation Voltage0.6 V0.3 V-
Maximum DC Collector Current1 A4 A-
Gain Bandwidth Product fT150 MHz150 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFZT489--
Height1.65 mm--
Length6.7 mm--
PackagingReelReel-
Width3.7 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Pd Power Dissipation2 W3 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz--
Technology-Si-
DC Current Gain hFE Max-300 at 1 A, 2 V-
Continuous Collector Current-1 A-
DC Collector/Base Gain hfe Min-100 at 1 mA, 2 V-
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