PartNumber | GS816118DD-200I | GS816118DD-200IV | GS816118DD-200 |
Description | SRAM 2.5 or 3.3V 1M x 18 18M | SRAM 1.8/2.5V 1M x 18 18M | SRAM 2.5 or 3.3V 1M x 18 18M |
Manufacturer | GSI Technology | GSI Technology | GSI Technology |
Product Category | SRAM | SRAM | SRAM |
Packaging | Tray | Tray | Tray |
Series | GS816118DD | GS816118DD | GS816118DD |
Brand | GSI Technology | GSI Technology | GSI Technology |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | SRAM | SRAM | SRAM |
Factory Pack Quantity | 36 | 18 | 36 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
Tradename | SyncBurst | SyncBurst | SyncBurst |
Memory Size | - | 18 Mbit | 18 Mbit |
Organization | - | 1 M x 18 | 1 M x 18 |
Access Time | - | 6.5 ns | 6.5 ns |
Maximum Clock Frequency | - | 200 MHz | 200 MHz |
Interface Type | - | Parallel | Parallel |
Supply Voltage Max | - | 2.7 V | 3.6 V |
Supply Voltage Min | - | 1.7 V | 2.3 V |
Supply Current Max | - | 210 mA, 215 mA | 195 mA, 195 mA |
Minimum Operating Temperature | - | - 40 C | 0 C |
Maximum Operating Temperature | - | + 85 C | + 70 C |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | BGA-165 | BGA-165 |
Memory Type | - | SDR | SDR |
Type | - | Synchronous Burst | Pipeline/Flow Through |
RoHS | - | - | N |