PartNumber | GS881E18CGT-200 | GS881E18CGT-200I | GS881E18CGT-200IV |
Description | SRAM 2.5 or 3.3V 512K x 18 9M | SRAM 2.5 or 3.3V 512K x 18 9M | SRAM 1.8/2.5V 512K x 18 9M |
Manufacturer | GSI Technology | GSI Technology | GSI Technology |
Product Category | SRAM | SRAM | SRAM |
RoHS | Y | Y | Y |
Memory Size | 9 Mbit | 9 Mbit | 9 Mbit |
Organization | 512 k x 18 | 512 k x 18 | 512 k x 18 |
Access Time | 6.5 ns | 6.5 ns | 6.5 ns |
Maximum Clock Frequency | 200 MHz | 200 MHz | 200 MHz |
Interface Type | Parallel | Parallel | Parallel |
Supply Voltage Max | 3.6 V | 3.6 V | 2.7 V |
Supply Voltage Min | 2.3 V | 2.3 V | 1.7 V |
Supply Current Max | 130 mA, 155 mA | 150 mA, 175 mA | 125 mA, 160 mA |
Minimum Operating Temperature | 0 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 70 C | + 85 C | + 85 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TQFP-100 | TQFP-100 | TQFP-100 |
Packaging | Tray | Tray | Tray |
Memory Type | SDR | SDR | SDR |
Series | GS881E18CGT | GS881E18CGT | GS881E18CGT |
Type | DCD Pipeline/Flow Through | DCD Pipeline/Flow Through | DCD |
Brand | GSI Technology | GSI Technology | GSI Technology |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | SRAM | SRAM | SRAM |
Factory Pack Quantity | 72 | 72 | 66 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
Tradename | SyncBurst | SyncBurst | SyncBurst |