GT50J121 vs GT50J121(Q) vs GT50J121(Q)-ND

 
PartNumberGT50J121GT50J121(Q)GT50J121(Q)-ND
Description
ManufacturerTOSHIBAToshiba Semiconductor and Storage-
Product CategoryIGBTs - SingleIGBTs - Single-
Series---
Packaging-Tube-
Package Case-TO-3PL-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-3P(LH)-
Power Max-240W-
Reverse Recovery Time trr---
Current Collector Ic Max-50A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-100A-
Vce on Max Vge Ic-2.45V @ 15V, 50A-
Switching Energy-1.3mJ (on), 1.34mJ (off)-
Gate Charge---
Td on off 25°C-90ns/300ns-
Test Condition-300V, 50A, 13 Ohm, 15V-
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