PartNumber | HGTG20N60B3D | HGTG20N60B3 | HGTG20N60B3 G20N60B3 |
Description | IGBT Transistors 600V IGBT UFS N-Channel | IGBT Transistors 600V N-Channel IGBT UFS Series | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | E | - |
Technology | Si | Si | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
Collector Emitter Saturation Voltage | 1.8 V | 1.8 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 20 A | 40 A | - |
Pd Power Dissipation | 165 W | 165 W | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | HGTG20N60B3D | HGTG20N60B3 | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 40 A | 40 A | - |
Height | 20.82 mm | 4.82 mm | - |
Length | 15.87 mm | 15.87 mm | - |
Width | 4.82 mm | 20.82 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Continuous Collector Current | 40 A | 40 A | - |
Gate Emitter Leakage Current | +/- 100 nA | +/- 100 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 450 | 450 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | HGTG20N60B3D_NL | HGTG20N60B3_NL | - |
Unit Weight | 0.225401 oz | 0.225401 oz | - |