HUFA75639S3ST-F085A vs HUFA75639S3ST vs HUFA75639S3ST-S2457

 
PartNumberHUFA75639S3ST-F085AHUFA75639S3STHUFA75639S3ST-S2457
DescriptionMOSFET N-CHAN UltraFET Pwr 56A 100V 0.025OhmMOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current56 A56 A-
Rds On Drain Source Resistance25 mOhms25 mOhms-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation200 W200 W-
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesHUF75639S_F085AHUFA75639S3S-
Transistor Type1 N-Channel1 N-Channel-
Width9.65 mm9.65 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeMOSFETMOSFET-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Part # AliasesHUFA75639S3ST_F085A--
Unit Weight0.046296 oz0.046296 oz-
Vgs Gate Source Voltage-20 V-
Channel Mode-Enhancement-
Type-MOSFET-
Fall Time-25 ns-
Rise Time-60 ns-
Typical Turn Off Delay Time-20 ns-
Typical Turn On Delay Time-15 ns-
Top