IDM02G120C5XTMA1 vs IDM02G120C5 vs IDM040202

 
PartNumberIDM02G120C5XTMA1IDM02G120C5IDM040202
DescriptionSchottky Diodes & Rectifiers SIC CHIP/DISCRETE1200V,2A,Silicon Carbide Schottky Diode
ManufacturerInfineonInfineon Technologies-
Product CategorySchottky Diodes & RectifiersDiodes, Rectifiers - Single-
RoHSY--
ProductSchottky Silicon Carbide DiodesSchottky Silicon Carbide Diodes-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-2--
If Forward Current2 A--
Vrrm Repetitive Reverse Voltage1.2 kV--
Vf Forward Voltage1.4 V--
Ifsm Forward Surge Current37 A--
ConfigurationSingleSingle-
TechnologySiCSiC-
Ir Reverse Current1.2 uA--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingReelTape & Reel (TR)-
BrandInfineon Technologies--
Pd Power Dissipation98 W--
Product TypeSchottky Diodes & Rectifiers--
Factory Pack Quantity2500--
SubcategoryDiodes & Rectifiers--
TradenameCoolSiC--
Vr Reverse Voltage1.2 kV--
Part # AliasesIDM02G120C5 SP001127112--
Unit Weight0.016014 oz--
Series-thinQ!-
Part Aliases-IDM02G120C5 SP001127112-
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Mounting Type-Surface Mount-
Supplier Device Package-PG-TO252-2-
Speed-Fast Recovery = 200mA (Io)-
Diode Type-Silicon Carbide Schottky-
Current Reverse Leakage Vr-18μA @ 1200V-
Voltage Forward Vf Max If-1.65V @ 2A-
Voltage DC Reverse Vr Max-1200V (1.2kV)-
Current Average Rectified Io-2A (DC)-
Reverse Recovery Time trr---
Capacitance Vr F-182pF @ 1V, 1MHz-
Operating Temperature Junction--55°C ~ 175°C-
Pd Power Dissipation-98 W-
Vf Forward Voltage-1.4 V-
Vr Reverse Voltage-1.2 kV-
Ir Reverse Current-1.2 uA-
If Forward Current-2 A-
Vrrm Repetitive Reverse Voltage-1.2 kV-
Ifsm Forward Surge Current-37 A-
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