IDP30E65D1XKSA1 vs IDP30E65D1 vs IDP30E65D2

 
PartNumberIDP30E65D1XKSA1IDP30E65D1IDP30E65D2
DescriptionDiodes - General Purpose, Power, Switching IGBT PRODUCTS
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryDiodes - General Purpose, Power, SwitchingDiodes, Rectifiers - SingleDiodes, Rectifiers - Single
RoHSY--
ProductSwitching Diodes--
Mounting StyleThrough Hole--
Package / CaseTO-220-2--
Peak Reverse Voltage650 V--
Max Surge Current180 A--
If Forward Current60 A--
ConfigurationSingle--
Recovery Time64 ns--
Vf Forward Voltage1.35 V--
Ir Reverse Current40 uA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
PackagingTubeTubeTube
BrandInfineon Technologies--
Maximum Diode Capacitance40 pF--
Pd Power Dissipation143 W--
Product TypeDiodes - General Purpose, Power, Switching--
Factory Pack Quantity500--
SubcategoryDiodes & Rectifiers--
Part # AliasesIDP30E65D1 SP001170108--
Unit Weight0.000353 oz--
Series---
Package Case-TO-220-2TO-220-2
Mounting Type-Through HoleThrough Hole
Supplier Device Package-PG-TO220-2-1PG-TO220-2-1
Speed-Fast Recovery = 200mA (Io)Fast Recovery = 200mA (Io)
Diode Type-StandardStandard
Current Reverse Leakage Vr-40μA @ 650V40μA @ 650V
Voltage Forward Vf Max If-1.7V @ 30A2.2V @ 30A
Voltage DC Reverse Vr Max-650V650V
Current Average Rectified Io-60A (DC)60A (DC)
Reverse Recovery Time trr-64ns42ns
Capacitance Vr F---
Operating Temperature Junction--40°C ~ 175°C-40°C ~ 175°C
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