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| PartNumber | IFF450B12ME4PB11BPSA1 | IFF450B12ME4S8PB11BPSA1 | IFF450B12ME4S8P_B11 |
| Description | IGBT Modules | IGBT Modules Description: | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 1.75 V | 1.75 V | - |
| Continuous Collector Current at 25 C | 450 A | 450 A | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | - |
| Pd Power Dissipation | 20 mW | - | - |
| Package / Case | 152 mm x 62.5 mm x 20.5 mm | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Press Fit | Screw Mount | - |
| Maximum Gate Emitter Voltage | 15 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 6 | 6 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | SP001377612 | IFF450B12ME4S8P_B11 | - |