IGW40N60H3 vs IGW40N60A vs IGW40N60H3 G40H603

 
PartNumberIGW40N60H3IGW40N60AIGW40N60H3 G40H603
DescriptionIGBT Transistors 600V 40A 306W
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C80 A--
Pd Power Dissipation306 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3--
PackagingTube--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGW40N60H3FKSA1 IGW4N6H3XK SP000769926--
Unit Weight0.229281 oz--
Top