IMX8T108 vs IMX8-7 vs IMX8

 
PartNumberIMX8T108IMX8-7IMX8
DescriptionBipolar Transistors - BJT DUAL NPN 120V 50MA SOT-457Bipolar Transistors - BJT DUAL NPN 225mWINSTOCK
ManufacturerROHM SemiconductorDiodes IncorporatedROHM
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTIC Chips
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Transistor PolarityNPNNPN-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max120 V120 V-
Collector Base Voltage VCBO120 V120 V-
Emitter Base Voltage VEBO5 V5 V-
Maximum DC Collector Current0.05 A0.05 A-
Gain Bandwidth Product fT140 MHz140 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIMX8IMX8-
DC Current Gain hFE Max820820-
Height1.1 mm1.1 mm-
Length2.9 mm3 mm-
PackagingReelReel-
Width1.6 mm1.6 mm-
BrandROHM SemiconductorDiodes Incorporated-
Continuous Collector Current50 mA0.05 A-
DC Collector/Base Gain hfe Min180180-
Pd Power Dissipation300 mW300 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # AliasesIMX8--
Package / Case-SOT-26-6-
Collector Emitter Saturation Voltage-0.5 V-
Unit Weight-0.001058 oz-
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