IPB015N04L G vs IPB015N04LGATMA1 vs IPB015N04L

 
PartNumberIPB015N04L GIPB015N04LGATMA1IPB015N04L
DescriptionMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance1.2 mOhms1.2 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge346 nC346 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation250 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min60 S60 S-
Fall Time21 ns21 ns-
Product TypeMOSFETMOSFET-
Rise Time13 ns13 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time108 ns108 ns-
Typical Turn On Delay Time25 ns25 ns-
Part # AliasesIPB015N04LGATMA1 IPB15N4LGXT SP000387948G IPB015N04L IPB15N4LGXT SP000387948-
Unit Weight0.139332 oz0.139332 oz-
Top