IPB020N08N5ATMA1 vs IPB020N08N5ATMA1-CUT TAPE vs IPB020N08N5

 
PartNumberIPB020N08N5ATMA1IPB020N08N5ATMA1-CUT TAPEIPB020N08N5
DescriptionMOSFET N-Ch 80V 120A D2PAK-2N-CH 80V 120A 2mOhm TO263-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance2.5 mOhms--
Vgs th Gate Source Threshold Voltage2.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge133 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 5--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min100 S--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time62 ns--
Typical Turn On Delay Time28 ns--
Part # AliasesIPB020N08N5 SP001227042--
Unit Weight0.139332 oz--
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