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| PartNumber | IPB120N06S4-02 4N0602 | IPB120N06S4-02 | IPB120N06S4-03 |
| Description | Darlington Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | |
| Manufacturer | - | INF | INF |
| Product Category | - | FETs - Single | FETs - Single |
| Series | - | OptiMOS-T2 | OptiMOS-T2 |
| Packaging | - | Reel | Reel |
| Part Aliases | - | IPB120N06S402ATMA1 IPB120N06S402ATMA2 IPB120N06S402XT SP001028776 | IPB120N06S403ATMA1 IPB120N06S403ATMA2 IPB120N06S403XT SP001028770 |
| Unit Weight | - | 0.139332 oz | 0.139332 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Tradename | - | OptiMOS | OptiMOS |
| Package Case | - | TO-252-3 | TO-252-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 188 W | 167 W |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 10 ns | 15 ns |
| Rise Time | - | 5 ns | 10 ns |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 120 A | 120 A |
| Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
| Rds On Drain Source Resistance | - | 2.4 mOhms | 2.8 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 50 ns | 80 ns |
| Typical Turn On Delay Time | - | 25 ns | 40 ns |
| Qg Gate Charge | - | 150 nC | 125 nC |