IPB60R299CPAATMA1 vs IPB60R299CPA vs IPB60R299CP

 
PartNumberIPB60R299CPAATMA1IPB60R299CPAIPB60R299CP
DescriptionMOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPAMOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPADarlington Transistors MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current11 A11 A-
Rds On Drain Source Resistance270 mOhms270 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge29 nC29 nC-
Minimum Operating Temperature- 40 C- 40 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation96 W96 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameCoolMOSCoolMOSCoolMOS
PackagingReelReelReel
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesCoolMOS CPACoolMOS CPACoolMOS CP
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time5 ns5 ns5 ns
Product TypeMOSFETMOSFET-
Rise Time5 ns5 ns5 ns
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns40 ns40 ns
Typical Turn On Delay Time10 ns10 ns10 ns
Part # AliasesIPB60R299CPA IPB6R299CPAXT SP000539970IPB60R299CPAATMA1 IPB6R299CPAXT SP000539970-
Unit Weight0.139332 oz0.068654 oz0.139332 oz
Part Aliases--IPB60R299CPATMA1 IPB60R299CPXT SP000301161
Package Case--TO-252-3
Pd Power Dissipation--96 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--11 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--299 mOhms
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